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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 20 Volts P-channel: VOLTAGE 20 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHM2030JPT CURRENT 6 Ampere CURRENT 4.3 Ampere FEATURE * Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. 1 SO-8 4.06 (0.160) 3.70 (0.146) 8 CONSTRUCTION * N-Channel & P-Channel Enhancement in the package 5.00 (0.197) 4.69 (0.185) 4 5 .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) .25 (0.010) .17 (0.007) 6.20 (0.244) 5.80 (0.228) CIRCUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted N-Channel P-Channel Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 20 -20 V V 12 6 (Note 3) 12 -4.3 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range A 35 2000 -55 to 150 -55 to 150 -17 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM2030JPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 A VDS = 20 V, VGS = 0 V VGS = 12V,VDS = 0 V VGS = -12V, VDS = 0 V 20 1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 A VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A 0.5 24 29 7 18 1 30 V m 40 S Forward Transconductance VDS =10V, ID = 6A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=10V, ID=6A VGS=4.5V V DD= 10V ID = 1.0A , VGS = 4.5 V RGEN= 6 23 4.5 8 23 20 45 16 30 nC ton 32 28 63 22 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) 1.7 1.2 A V Drain-Source Diode Forward Voltage IS = 1.7A , VGS = 0 V (Note 2) RATING CHARACTERISTIC CURVES ( CHM2030JPT ) P-Channel Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -16 V, VGS = 0 V VGS = 12V,VDS = 0 V VGS = -12V, VDS = 0 V -20 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = -250 A VGS=-4.5V, ID=-2.2A VGS=-2.5V, ID=-1.8A -0.6 50 80 4 6 90 V m 120 S Forward Transconductance VDS = -16V, ID = -2.2A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-6V, ID=-2.2A VGS=-4.5V V DD= -10V I D = -2.2A , VGS = -4.5 V RGEN= 6 19.4 3 5 20 21 76 56 25 nC ton 28 30 106 78 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -2.5 -1.0 A V Drain-Source Diode Forward Voltage IS = -1.8A , VGS = 0 V (Note 2) |
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